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Proceedings Paper

Raman scattering characterization of processing effects on GaAs planar photoconductors
Author(s): Monique T. Constant; A. Bellarbi; A. Lorriaux; Bertrand Grimbert
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Paper Abstract

Raman scattering has been used to probe the effects of both chemical and plasma etching on the photosensitive area of GaAs planar photoconductors, and also to examine the stress at a Si3N4 film/n-doped GaAs interface. Electrical performance on the photoconductors has been measured and then correlated to the Raman results. As expected, increasing the number of processes leads to slightly poorer electrical performance.

Paper Details

Date Published: 1 July 1992
PDF: 10 pages
Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); doi: 10.1117/12.60449
Show Author Affiliations
Monique T. Constant, Univ. des Sciences et Techniques de Lille Flandres Artois (France)
A. Bellarbi, Univ. des Sciences et Techniques de Lille Flandres Artois (France)
A. Lorriaux, Univ. des Sciences et Techniques de Lille Flandres Artois (France)
Bertrand Grimbert, Univ. des Sciences et Techniques de Lille Flandres Artois (France)


Published in SPIE Proceedings Vol. 1678:
Spectroscopic Characterization Techniques for Semiconductor Technology IV

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