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Proceedings Paper

Raman scattering in InxGa1-x As/GaAs superlattices grown by molecular-beam epitaxy
Author(s): Monique T. Constant; N. Matrullo; A. Lorriaux; R. Fauquembergue; Y. Druelle
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Paper Abstract

The pseudomorphic GaAs/InxGa1-xAs structures are of particular interest because of the high value of the InxGa1-xAs electron mobility and the good electron confinement in the ternary alloy. Raman scattering experiments were carried out to measure the optical lattice modes of a series of GaAs/InxGa1-xAs strained- layer superlattices grown by molecular beam epitaxy on (001) surface of GaAs substrates. The frequency shifts between commensurate and incommensurate layers give a quantitative determination of strain in each type of the strained layers. For this purpose, we have also measured the Raman phonon frequencies of bulk InxGa1-1As alloy samples upon a large scale of composition. Double crystal x-ray rocking curve (XRC) data on superlattices are compared to those of Raman experiments. This allows a more valid estimation of the obtained results.

Paper Details

Date Published: 1 July 1992
PDF: 6 pages
Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); doi: 10.1117/12.60448
Show Author Affiliations
Monique T. Constant, Univ. des Sciences et Techniques de Lille Flandres Artois (France)
N. Matrullo, Univ. des Sciences et Techniques de Lille Flandres Artois (France)
A. Lorriaux, Univ. des Sciences et Techniques de Lille Flandres Artois (France)
R. Fauquembergue, Univ. des Sciences et Techniques de Lille Flandres Artois (France)
Y. Druelle, Univ. des Sciences et Techniques de Lille Flandres Artois (France)


Published in SPIE Proceedings Vol. 1678:
Spectroscopic Characterization Techniques for Semiconductor Technology IV

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