Share Email Print
cover

Proceedings Paper

Systematic optical study of InxGa1-xAs on InP using photoluminescence, photoreflectance, and micro-Raman spectroscopy
Author(s): Joseph P. Estrera; Walter M. Duncan; Yung Chung Kao; H. Y. Liu; Patrick D. Stevens; E. A. Beam
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

We present a systematic study of the optical and structural properties of InGaAs grown on InP:Fe by molecular beam epitaxy (MBE) and metalorganic molecular beam epitaxy (MOMBE). The properties of these films were measured using photoluminescence, photoreflectance, and micro-Raman spectroscopy and correlated to double-crystal x-ray diffractometry. Lineshape analysis of low temperature Fourier transform photoluminescence (FTPL) allowed the identification of four optical transitions; bound exciton, donor-to-acceptor pair, and two bands which are impurity or defect related. The band-gap energy to XRD composition, relationship demonstrates films off the lattice match composition are under biaxial strain. Room temperature photoreflectance (PR) with a complex Airy functional model were used to directly yield band-gap energies (light and heavy hole). The complex Airy lineshapes were applied to both intermediate electric field (Franz-Keldysh oscillations) and low field PR spectra illustrating that the complex Airy analysis represents a generalized treatment. We correlate the band-gap energies from the PR spectral fits to those determined from PL measurements. Micro-Raman spectroscopy was performed in the <100> and <011> backscattering directions to identify four phonon modes; InAs-like TO (226 cm-1), InAs-like LO (233 cm-1), GaAs-like TO (255 cm-1), and GaAs-like LO (270 cm-1), and one alloy disorder mode R* (244 cm-1) for InGaAs on InP. For all five Raman features, a linear relationship between the Raman frequency and composition was determined for near lattice matched conditions (0.04 < 1 - x < 0.52).

Paper Details

Date Published: 1 July 1992
PDF: 11 pages
Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); doi: 10.1117/12.60447
Show Author Affiliations
Joseph P. Estrera, Univ. of Texas/Dallas (United States)
Walter M. Duncan, Texas Instruments, Inc. (United States)
Yung Chung Kao, Texas Instruments, Inc. (United States)
H. Y. Liu, Texas Instruments, Inc. (United States)
Patrick D. Stevens, Univ. of Texas/Dallas (United States)
E. A. Beam, Texas Instruments, Inc. (United States)


Published in SPIE Proceedings Vol. 1678:
Spectroscopic Characterization Techniques for Semiconductor Technology IV

© SPIE. Terms of Use
Back to Top