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Proceedings Paper

Raman spectroscopy of delta-doped GaAs layers and wires (Invited Paper)
Author(s): Joachim Wagner
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Paper Abstract

Raman spectroscopy is used to study the incorporation of Si in (delta) -doped GaAs layers via light scattering by local vibrational modes. This includes the analysis of Si monolayers embedded in GaAs. Raman scattering by excitations of the two-dimensional electron gas in (delta) -doped GaAs gives information on the subbands formed by the space charge induced potential well. In addition, the effect of additional lateral confinement on these subbands can be studied.

Paper Details

Date Published: 1 July 1992
PDF: 10 pages
Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); doi: 10.1117/12.60446
Show Author Affiliations
Joachim Wagner, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)

Published in SPIE Proceedings Vol. 1678:
Spectroscopic Characterization Techniques for Semiconductor Technology IV

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