Share Email Print

Proceedings Paper

Luminescence properties of Al0.48In0.52As under hydrostatic pressure
Author(s): Hai-Ping Zhou; Cliva M. Sotomayor-Torres
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The low-temperature photoluminescence (PL) and photoluminescence excitation (PLE) spectra characteristics of Al0.48In0.52As have been studied under high pressure from 1 bar up to 92 kbar. We have obtained, for the first time, the (Gamma) -(Chi) crossover critical pressure Pc (approximately 52.5 +/- 0.5 kbar), the linear pressure coefficients (alpha) (Gamma ) and (alpha) (Chi ) (7.9 meV/kbar and -2.9 meV/kbar, respectively) at helium temperature. By measuring temperature and excitation intensity dependences of the PL spectra together with the PLE spectra, we have demonstrated that the low-temperature luminescence of the Al0.48In0.52As is not excitonic but due to (D degree(s), A degree(s))transitions with a relatively deep acceptor of 68 meV, which occurs in both the direct- and indirect-band gap. We suggest that the shallow donor ground state associated with the (Chi) - and (Gamma) -conduction bands seem to be tied quite rigidly to these conduction bands. Variations in the donor binding energies with the pressure and the direct-indirect crossover seem to be minor.

Paper Details

Date Published: 1 July 1992
PDF: 12 pages
Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); doi: 10.1117/12.60445
Show Author Affiliations
Hai-Ping Zhou, Univ. of Glasgow (United Kingdom)
Cliva M. Sotomayor-Torres, Univ. of Glasgow (United Kingdom)

Published in SPIE Proceedings Vol. 1678:
Spectroscopic Characterization Techniques for Semiconductor Technology IV
Orest J. Glembocki, Editor(s)

© SPIE. Terms of Use
Back to Top