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Proceedings Paper

Optical studies of lattice-matched and strained GaInAs/AlInAs single quantum wells
Author(s): A. Tabata; S. Moneger; Taha Benyattou; Y. Baltagi; Gerard Guillot; Alexandros Georgakilas; K. Zekentes; G. Halkias
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Paper Abstract

Photoconductivity (PC), photoluminescence (PL), and photoreflectance (PR) have been carried out on In0.52Al0.48As/InxGa1-xAs single quantum wells, in lattice matched and lattice mismatched composition. The unstrained (xIn equals 0.53) and the strained (xIn equals 0.60) samples have been grown by molecular beam epitaxy (MBE), with well thicknesses of 5 nm and 25 nm. Low temperature PL measurements have shown a narrow full width at half maximum (FWHM) for the unstrained samples, indicating a very good interface quality. In strained samples a broadening on the FWHM has been found, indicating a small degradation of the structure quality with the introduction of strain. With the PC and PR measurements we have been able to observe transitions between electron and heavy holes levels (EiHi) up to i equals 5 and also between the first electron and light holes levels (E1L1). We have then calculated the theoretical values of these transitions by solving the Schroedinger equation in a finite square well, using an envelope function approximation, an effective mass approximation, and including the effects of strain on the band structure and on the effective mass. For the lattice matched composition, the best fit is obtained for conduction band offset (Delta) Ec equals 0.50 +/- 0.05 eV, in agreement with the literature. For example, with xIn equals 0.60 composition the best fit is obtained for (Delta) Ec equals 0.55 +/- 0.05 eV, in agreement with theory which predicts that (Delta) Ec increases with indium content.

Paper Details

Date Published: 1 July 1992
PDF: 7 pages
Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); doi: 10.1117/12.60444
Show Author Affiliations
A. Tabata, INSA de Lyon (France)
S. Moneger, INSA de Lyon (France)
Taha Benyattou, INSA de Lyon (France)
Y. Baltagi, INSA de Lyon (France)
Gerard Guillot, INSA de Lyon (France)
Alexandros Georgakilas, Foundation for Research and Technology-Hellas (United States)
K. Zekentes, Foundation for Research and Technology-Hellas (Greece)
G. Halkias, Foundation for Research and Technology-Hellas (Greece)


Published in SPIE Proceedings Vol. 1678:
Spectroscopic Characterization Techniques for Semiconductor Technology IV

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