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Proceedings Paper

Photoluminescence from pseudomorphically strained Si/Si1-xGex multiple quantum wells grown on silicon
Author(s): Stefan Zollner; Reuben T. Collins; Mark S. Goorsky; P. J. Wang; M. J. Tejwani; J. O. Chu; Bernard S. Meyerson; F. K. LeGoues
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Paper Abstract

We have grown Si/Sii_Ger multiple quantum wells (r 8%) lattice-matched to silicon with well thicknesses between 3 and 20 nni using UHV-CVD. The sample parameters were obtained accurately with high-resolution X-ray diffraction ( rocking curves) and transmission electron microscopy. From an analysis of the band-edge related photoluminescence energies we find a blue-shift due to confinement for thin wells.

Paper Details

Date Published: 1 July 1992
PDF: 8 pages
Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); doi: 10.1117/12.60443
Show Author Affiliations
Stefan Zollner, IBM Thomas J. Watson Research Ctr. (United States)
Reuben T. Collins, IBM Thomas J. Watson Research Ctr. (United States)
Mark S. Goorsky, IBM Thomas J. Watson Research Ctr. (United States)
P. J. Wang, IBM Thomas J. Watson Research Ctr. (United States)
M. J. Tejwani, IBM Thomas J. Watson Research Ctr. (United States)
J. O. Chu, IBM Thomas J. Watson Research Ctr. (United States)
Bernard S. Meyerson, IBM Thomas J. Watson Research Ctr. (United States)
F. K. LeGoues, IBM Thomas J. Watson Research Ctr. (United States)


Published in SPIE Proceedings Vol. 1678:
Spectroscopic Characterization Techniques for Semiconductor Technology IV
Orest J. Glembocki, Editor(s)

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