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Proceedings Paper

In-situ electron spectroscopy studies of interaction between P and GaAs(100) surface
Author(s): Xue Kun Lu; Xiaoyuan Hou; Xunmin Ding; Xun Wang
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Paper Abstract

The interaction between P and GaAs(100) surface has been studied by XPS, UPS, HREELS and LEED. The results show that, at room temperature, P is adsorbed on the GaAs surface to form amorphous P thin film. There is less than one monolayer of P atoms bonded to the Ga atoms of the substrate at the interface. The amorphous P overlayer covered on the top of GaAs results in 0.2eV lowering of the GaAs surface barrier. The thermal annealing at 100°C-300°C will cause most of the amorphous P desorbed, with some randomly distributed P-clusters left on the surface. High temperature annealing will make all the remaining P atoms interact with the substrate to form Ga-P bonds. The exchange reaction between deposited P and the substrate will take place successively to form GaAsP thin film when P is deposited on GaAs substrate at higher temperatures. -This film is suggested to be a promising passivating film for GaAs surface.

Paper Details

Date Published: 1 July 1992
PDF: 9 pages
Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); doi: 10.1117/12.60439
Show Author Affiliations
Xue Kun Lu, Fudan Univ. (China)
Xiaoyuan Hou, Fudan Univ. (China)
Xunmin Ding, Fudan Univ. (China)
Xun Wang, Fudan Univ. (China)


Published in SPIE Proceedings Vol. 1678:
Spectroscopic Characterization Techniques for Semiconductor Technology IV
Orest J. Glembocki, Editor(s)

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