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Proceedings Paper

First MMW characterization of ErAs/InAlGaAs/InP semimetal-semiconductor-Schottky diode (S3) detectors for passive millimeter wave and infrared imaging
Author(s): Hooman Kazemi; Jeramy D. Zimmerman; Elliott R. Brown; Arthur C. Gossard; Glenn D. Boreman; Jonathan B. Hacker; Brian Lail; Charles Middleton
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Paper Abstract

We present the first mm-wave characterization of Semimetal Semiconductor Schottky (S3) diodes for direct detector applications from 94 GHz to 30 THz. The S3 devices use molecular-beam epitaxy growth of binary compounds that are closely lattice-matched and crystallographically perfect across the heterointerface to reduce 1/f and burst noise while maintaining ultra-high-frequency performance. The S3 diodes are fabricated from an InAlGaAs/InP based material system with both the Schottky layer and contact layer having n and n+ doping levels. The semimetal Schottky contact is ErAs which is grown in-situ during the MBE growth. By varying the InAlAs percentage content in the epitaxial layer structure, the diode dc I-V characteristics and its zero bias responsivity are optimized. Diode s-parameter data from dc-100 GHz is used to determine the diode responsivity as a function of frequency and diode capacitance and resistance. These measurements then allow the device intrinsic and extrinsic equivalent-circuit elements to be optimized for direct detection from 94 GHz to ~30 THz.

Paper Details

Date Published: 19 May 2005
PDF: 4 pages
Proc. SPIE 5789, Passive Millimeter-Wave Imaging Technology VIII, (19 May 2005); doi: 10.1117/12.604118
Show Author Affiliations
Hooman Kazemi, Rockwell Scientific Co. (United States)
Jeramy D. Zimmerman, Univ. of California/Santa Barbara (United States)
College of Optics and Photonics/Univ. of Central Florida (United States)
Elliott R. Brown, Univ. of California/Santa Barbara (United States)
Arthur C. Gossard, Univ. of California/Santa Barbara (United States)
Glenn D. Boreman, Univ. of California/Santa Barbara (United States)
College of Optics and Photonics/Univ. of Central Florida (United States)
Jonathan B. Hacker, Rockwell Scientific Co. (United States)
Brian Lail, Univ. of California/Santa Barbara (United States)
College of Optics and Photonics/Univ. of Central Florida (United States)
Charles Middleton, Univ. of California/Santa Barbara (United States)
College of Optics and Photonics/Univ. of Central Florida (United States)


Published in SPIE Proceedings Vol. 5789:
Passive Millimeter-Wave Imaging Technology VIII
Roger Appleby; David A. Wikner, Editor(s)

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