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Proceedings Paper

Grating gated FETs as narrowband tunable terahertz detectors
Author(s): Eric A. Shaner; Michael C. Wanke; Mark Lee; John L. Reno; S. James Allen; Xomalin G. Peralta
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Paper Abstract

Grating gated field effect transistors (FETs) are potentially important as electronically tunable terahertz detectors with spectral bandwidths of the order of 50 GHz. Their utility depends on being able to 1) use the intrinsic high speed in a heterodyne mixer or 2) sacrifice speed for sufficient sensitivity to be an effective incoherent detector. In its present form the grating gated FET will support IF frequencies up to ~10 GHz, an acceptable bandwidth for most heterodyne applications. By separating the resonant plasmon absorption from the responsivity mechanism, it appears that a tuned, narrow terahertz spectral band bolometer can be fabricated with NEP ~ 10-11 watts/√Hz and response times of the order of 30 msecs, useful in a passive multispectral terahertz imaging system.

Paper Details

Date Published: 18 May 2005
PDF: 7 pages
Proc. SPIE 5790, Terahertz for Military and Security Applications III, (18 May 2005); doi: 10.1117/12.603497
Show Author Affiliations
Eric A. Shaner, Sandia National Labs. (United States)
Michael C. Wanke, Sandia National Labs. (United States)
Mark Lee, Sandia National Labs. (United States)
John L. Reno, Sandia National Labs. (United States)
S. James Allen, Univ. of California/Santa Barbara (United States)
Xomalin G. Peralta, Univ. of California/Santa Barbara (United States)


Published in SPIE Proceedings Vol. 5790:
Terahertz for Military and Security Applications III
R. Jennifer Hwu; Dwight L. Woolard; Mark J. Rosker, Editor(s)

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