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Proceedings Paper

InAs/(GaIn)Sb short-period superlattices for focal plane arrays
Author(s): Robert Rehm; Martin Walther; Johannes Schmitz; Joachim Fleissner; Frank Fuchs; Wolfgang Cabanski; Johann Ziegler
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Paper Abstract

An infrared camera based on a 256x256 focal plane array for the Mid-IR spectral range (3-5 μm) has been realized for the first time with InAs/GaSb short-period superlattices. The detector shows a cut-off wavelength of 5.4 μm and reveals a quantum efficiency of 30%. The noise equivalent temperature difference (NETD) reaches 9.4 mK at 73 K with F/2 optics and 6.5 ms integration time. Excellent thermal images with low NETD values and a very good modulation transfer function are presented. Furthermore, a new method to passivate InAs/GaInSb superlattice photodiodes for the 8-10 μm regime is demonstrated. The approach is based on the epitaxial overgrowth of wet-etched mesa diodes using lattice matched AlGaAsSb. A complete suppression of surface leakage currents in small sized test diodes with 70 μm diameter is observed.

Paper Details

Date Published: 31 May 2005
PDF: 8 pages
Proc. SPIE 5783, Infrared Technology and Applications XXXI, (31 May 2005); doi: 10.1117/12.603420
Show Author Affiliations
Robert Rehm, Fraunhofer-Institut fur Angewandte Festkorperphysik (Germany)
Martin Walther, Fraunhofer-Institut fur Angewandte Festkorperphysik (Germany)
Johannes Schmitz, Fraunhofer-Institut fur Angewandte Festkorperphysik (Germany)
Joachim Fleissner, Fraunhofer-Institut fur Angewandte Festkorperphysik (Germany)
Frank Fuchs, Fraunhofer-Institut fur Angewandte Festkorperphysik (Germany)
Wolfgang Cabanski, AEG Infrarot-Module GmbH (Germany)
Johann Ziegler, AEG Infrarot-Module GmbH (Germany)


Published in SPIE Proceedings Vol. 5783:
Infrared Technology and Applications XXXI
Bjorn F. Andresen; Gabor F. Fulop, Editor(s)

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