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Proceedings Paper

Electron-bombarded CCD image intensifier with a GaAs photocathode
Author(s): William S. Enloe; Richard Shelden; Larry Reed; Avraham Amith
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Paper Abstract

ITT has an ongoing research program to develop a new generation of image intensifiers that uses a charge-coupled device (CCD) operated in the electron-bombarded mode in order to detect electrons directly from a GaAs photocathode. This type of image intensifier combines signal-to-noise levels typical of microchannel plate (MCP) image tubes with the modulation transfer function (MTF) performance of a diode tube design and generates electronic output compatible with standard video displays. The first successful electron-bombarded CCD (EB- CCD) image intensifier with a GaAs photocathode was demonstrated in August 1991. This photocathode was a standard ITT negative-electron-affinity (NEA) GaAs photocathode. Imagery was obtained from this device. The intensifier incorporated an RCA back-illuminated frame-transfer CCD, designed for electron detection and mounted in a vacuum compatible package. The cathode had a photoresponse of 965 (mu) A/lm at 6 kV -- equivalent to 1,166 (mu) A/lm at an electric field typical of proximity-focused image intensifiers (80 V/mil). A full-well signal was obtained with 2.5 X 10-5 fc photocathode illumination and 6 kV cathode-to-CCD bias. A photocathode life in excess of 280 hours at 1 X 10-4 fc illumination was demonstrated.

Paper Details

Date Published: 1 June 1992
PDF: 9 pages
Proc. SPIE 1655, Electron Tubes and Image Intensifiers, (1 June 1992); doi: 10.1117/12.60337
Show Author Affiliations
William S. Enloe, ITT Corp. (United States)
Richard Shelden, ITT Corp. (United States)
Larry Reed, ITT Corp. (United States)
Avraham Amith, ITT Corp. (United States)

Published in SPIE Proceedings Vol. 1655:
Electron Tubes and Image Intensifiers
C. Bruce Johnson; Bruce N. Laprade, Editor(s)

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