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Proceedings Paper

Progress in negative luminescent Hg1-xCdxTe diode arrays
Author(s): Mary K. Haigh; Geoffrey R. Nash; Neil T. Gordon; James Edwards; Alan J. Hydes; David J. Hall; Andrew Graham; Jean Giess; Janet E. Hails; Tim Ashley
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Paper Abstract

Negative luminescent devices, which absorb more light than they emit when reverse biased, have a large number of applications including, reference planes for thermal cameras, infrared (IR) sources and IR scene projection. This paper describes devices made from mercury cadmium telluride grown on silicon substrates, focusing on large area arrays with reduced operating powers. Novel growth structures and device designs have been investigated in order to reduce the series resistance. Results from the first dry etched, LW MCT on Si, 1 cm2 device with optical concentrators are presented.

Paper Details

Date Published: 31 May 2005
PDF: 8 pages
Proc. SPIE 5783, Infrared Technology and Applications XXXI, (31 May 2005); doi: 10.1117/12.603292
Show Author Affiliations
Mary K. Haigh, QinetiQ (United Kingdom)
Geoffrey R. Nash, QinetiQ (United Kingdom)
Neil T. Gordon, QinetiQ (United Kingdom)
James Edwards, QinetiQ (United Kingdom)
Alan J. Hydes, QinetiQ (United Kingdom)
David J. Hall, QinetiQ (United Kingdom)
Andrew Graham, QinetiQ (United Kingdom)
Jean Giess, QinetiQ (United Kingdom)
Janet E. Hails, QinetiQ (United Kingdom)
Tim Ashley, QinetiQ (United Kingdom)


Published in SPIE Proceedings Vol. 5783:
Infrared Technology and Applications XXXI
Bjorn F. Andresen; Gabor F. Fulop, Editor(s)

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