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Proceedings Paper

Photoresist modulation curves
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Paper Abstract

Photoresist modulation curves are introduced as a quantitative way to characterize the photoresist process performance when used as a detector in a microlithographic system. The new method allows predicting exposure latitude of the photoresist process across a wide range of resolutions and modulation levels of the aerial image. The data collection process is demonstrated using an immersion interference system, capable of variable resolution and full control over the modulation of the delivered aerial image.

Paper Details

Date Published: 12 May 2004
PDF: 7 pages
Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2004); doi: 10.1117/12.602805
Show Author Affiliations
Anatoly Bourov, Rochester Institute of Technology (United States)
Yongfa Fan, Rochester Institute of Technology (United States)
Frank C. Cropanese, Rochester Institute of Technology (United States)
Bruce W. Smith, Rochester Institute of Technology (United States)


Published in SPIE Proceedings Vol. 5754:
Optical Microlithography XVIII
Bruce W. Smith, Editor(s)

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