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Proceedings Paper

Terahertz-frequency quantum oscillator operating in the positive differential resistance region
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Paper Abstract

The traditional implementation of resonant tunneling diodes (RTD) as a high-frequency power source always requires the utilization of negative-differential resistance (NDR). However, there are inherent problems associated with effectively utilizing the two-terminal NDR gain to achieve significant levels of output power. This paper will present a new design methodology where resonant tunneling structures (RTS) are engineered to exhibit electronic instabilities within the positive-differential-resistance (PDR) region. As will be demonstrated, this approach utilizes a microscopic instability that alleviates the need to reduce device area (and therefore output power) in an effort to achieve low-frequency stabilization.

Paper Details

Date Published: 18 May 2005
PDF: 12 pages
Proc. SPIE 5790, Terahertz for Military and Security Applications III, (18 May 2005); doi: 10.1117/12.602727
Show Author Affiliations
Peiji Zhao, North Carolina State Univ. (United States)
Dwight Woolard, North Carolina State Univ. (United States)
U.S. Army Research Lab. (United States)
Matthew Lasater, North Carolina State Univ. (United States)
C. T. Kelley, North Carolina State Univ. (United States)
Robert Trew, North Carolina State Univ. (United States)


Published in SPIE Proceedings Vol. 5790:
Terahertz for Military and Security Applications III
R. Jennifer Hwu; Dwight L. Woolard; Mark J. Rosker, Editor(s)

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