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Proceedings Paper

All i-line lift-off T-gate process and materials
Author(s): Medhat A. Toukhy; Ping-Hung Lu; Salem K. Mullen
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Paper Abstract

An all i-line 0.22 um T-gate process is demonstrated. A resist structure suitable for metal deposition and lift-off is constructed sequentially with two different resist materials. The lithographic process is described in details in this paper.

Paper Details

Date Published: 4 May 2005
PDF: 6 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.602636
Show Author Affiliations
Medhat A. Toukhy, AZ Electronic Materials (United States)
Ping-Hung Lu, AZ Electronic Materials (United States)
Salem K. Mullen, AZ Electronic Materials (United States)


Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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