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Proceedings Paper

> 360 W and > 70% efficient GaAs-based diode lasers
Author(s): Paul Crump; Jun Wang; Trevor Crum; Suhit Das; Mark DeVito; Weimin Dong; Jason Farmer; Yan Feng; Mike Grimshaw; Damian Wise; Shiguo Zhang
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Paper Abstract

High power GaAs-based high power diode bars produce wavelengths in the range of 780 to 980 nm and are widely used for pumping a broad range of rare earth doped solid-state lasers. As the markets for these laser systems mature, diode lasers that operate at higher power levels, greater overall efficiency, and higher reliability are in high demand. In this paper we report efficiencies of over 70% in the 9xx-nm band, continuous wave power levels over 340 Watts in the 8xx-nm band, and reliability data at or above 100 Watts. We will also review the latest advances in performance and detail the basic physics and material science required to achieve these results.

Paper Details

Date Published: 17 March 2005
PDF: 9 pages
Proc. SPIE 5711, High-Power Diode Laser Technology and Applications III, (17 March 2005); doi: 10.1117/12.602577
Show Author Affiliations
Paul Crump, nLight Corp. (United States)
Jun Wang, nLight Corp. (United States)
Trevor Crum, nLight Corp. (United States)
Suhit Das, nLight Corp. (United States)
Mark DeVito, nLight Corp. (United States)
Weimin Dong, nLight Corp. (United States)
Jason Farmer, nLight Corp. (United States)
Yan Feng, nLight Corp. (United States)
Mike Grimshaw, nLight Corp. (United States)
Damian Wise, nLight Corp. (United States)
Shiguo Zhang, nLight Corp. (United States)


Published in SPIE Proceedings Vol. 5711:
High-Power Diode Laser Technology and Applications III
Mark S. Zediker, Editor(s)

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