Share Email Print

Proceedings Paper

Growth and fabrication of AlGaInN-based UV-LEDs using SiN nano-mask technique (Invited Paper)
Author(s): Y. Naoi; H. Sato; H. Yamamoto; K. Ono; A. Nakamura; M. Kimura; S. Nouda; S. Sakai
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

370nm AlGaInN-based light emitting diodes (LEDs) with SiN in the active layer, fabricated on sapphire substrates by one-time metal organic chemical vapor deposition (MOCVD) have been investigated. Atomic force microscopy and cathodoluminesence results indicated that SiN nano-mask was formed in the active layer, and the degree of compositional indium fluctuation in the active layer of UV-LEDs was enhanced. By using this technique, the output power of the LEDs was improved about 1.3 times than that of the same structure without SiN in the active layer.

Paper Details

Date Published: 28 April 2005
PDF: 8 pages
Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); doi: 10.1117/12.601958
Show Author Affiliations
Y. Naoi, Univ. of Tokushima (Japan)
H. Sato, Nitride Semiconductors Co., Ltd. (Japan)
H. Yamamoto, Nitride Semiconductors Co., Ltd. (Japan)
K. Ono, Univ. of Tokushima (Japan)
A. Nakamura, Univ. of Tokushima (Japan)
M. Kimura, Nitride Semiconductors Co., Ltd (Japan)
S. Nouda, Nitride Semiconductors Co., Ltd (Japan)
S. Sakai, Univ. of Tokushima (Japan)

Published in SPIE Proceedings Vol. 5722:
Physics and Simulation of Optoelectronic Devices XIII
Marek Osinski; Fritz Henneberger; Hiroshi Amano, Editor(s)

© SPIE. Terms of Use
Back to Top