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Proceedings Paper

Full 3D FDTD analysis of modal characteristics in VCSELs with holey structure
Author(s): Kosuke Morito; Daisuke Mori; Eichi Mizuta; Toshihiko Baba
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Paper Abstract

We analyzed lateral mode characteristics in 850-nm GaAs-based VCSELs with holey structures by FDTD method. Full three-dimensional analysis, which requires huge computer resources, was carried out using cluster computer. As a result, we estimated the good mode selectivity in circular and triangular holey structures, which cannot be obtained in a simple oxide aperture structure. It is explained by the large ra-diation loss from the inter-hole spacing and scattering loss at the bottom of holes particularly for higher order modes. In addition, the experimental result reported by Furukawa, et al., which showed the record high power single mode operation by the floral fundamental mode in the triangular holey structure, was verified. For any changes of standard structural parameters, only the Gaussian-like fundamental mode was confirmed. The floral mode was observed only when we assumed a nonuniform refractive index around the holey structure. Such nonuniformity can be considered in actual devices because of the non-uniform distribution of carriers and temperature at high current injection level.

Paper Details

Date Published: 28 April 2005
PDF: 10 pages
Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); doi: 10.1117/12.601955
Show Author Affiliations
Kosuke Morito, Yokohama National Univ. (Japan)
Daisuke Mori, Yokohama National Univ. (Japan)
Eichi Mizuta, Yokohama National Univ. (Japan)
Toshihiko Baba, Yokohama National Univ. (Japan)


Published in SPIE Proceedings Vol. 5722:
Physics and Simulation of Optoelectronic Devices XIII
Marek Osinski; Fritz Henneberger; Hiroshi Amano, Editor(s)

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