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Proceedings Paper

Edge and surface-emitting tilted cavity lasers (Invited Paper)
Author(s): N. N. Ledentsov; V. A. Shchukin; A. R. Kovsh; S. S. Mikhrin; I. L. Krestnikov; A. V. Kozhukhov; N. Yu. Gordeev; L. Ya. Karachinsky; M. V. Maximov; I. I. Novikov; Yu. M. Shernyakov
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Paper Abstract

The Tilted Cavity (TC) concept has been proposed to combine advantages of edge- and surface-emitting lasers (detectors, amplifiers, switches, etc.). Tilted Cavity Lasers (TCL) enable wavelength-stabilized high-power edge and surface emitters (TCSEL) in low-cost single-epitaxial step design. The concept covers numerous applications including mode-locked TCL for light speed control, dispersion and linewidth engineering, GaN-based light-emitters, electrooptic wavelength tunable devices, and other applications. Presently, wavelength stabilized TC operation is realized between -200°C and 70°C in broad TCL diodes with cleaved facets based on quantum dots (QDs). The spectral width is below 0.6 nm in broad area 100 μm-wide-stipe devices. The far fields are: 4° (lateral) and 42° (vertical). Wavelength-stabilized 1.16 μm and 1.27 μm edge-emitting QD TCL lasers are demonstrated. Quantum well TCL demonstrate high-temperature operation up to 240°C with a low threshold, high temperature stability and improved wavelength stability. The tilted cavity approach can also be applied in wavelength-optimized photodetectors, switches, semiconductor optical amplifiers, including multi-channel devices, in optical fibers, in photodetectors, in light-emitting diodes and in many other applications. Moreover, microelectronic devices based on similar tilted angle resonance phenomena in quantum wells and superlattices can be realized in electron- or hole-wavefunction-engineered structures, thus, merging the fields of nanophotonics and nanoelectronics. The tilted cavity concept can be further complimented by lateral patterning and (or) processing of three-dimensional photonic crystal structures further extending horizons of modern optoelectronics.

Paper Details

Date Published: 28 April 2005
PDF: 17 pages
Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); doi: 10.1117/12.601953
Show Author Affiliations
N. N. Ledentsov, NL-Nanosemiconductor GmbH (Germany)
V. A. Shchukin, NL-Nanosemiconductor GmbH (Germany)
A. R. Kovsh, NL-Nanosemiconductor GmbH (Germany)
S. S. Mikhrin, NL-Nanosemiconductor GmbH (Germany)
I. L. Krestnikov, NL-Nanosemiconductor GmbH (Germany)
A. V. Kozhukhov, NL-Nanosemiconductor GmbH (Germany)
N. Yu. Gordeev, Abraham Ioffe Physical Technical Institute (Russia)
L. Ya. Karachinsky, Abraham Ioffe Physical Technical Institute (Russia)
M. V. Maximov, Abraham Ioffe Physical Technical Institute (Russia)
I. I. Novikov, Abraham Ioffe Physical Technical Institute (Russia)
Yu. M. Shernyakov, Abraham Ioffe Physical Technical Institute (Russia)


Published in SPIE Proceedings Vol. 5722:
Physics and Simulation of Optoelectronic Devices XIII
Marek Osinski; Fritz Henneberger; Hiroshi Amano, Editor(s)

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