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Proceedings Paper

Predicted performance of HgCdTe photodiodes for 15-25 µm detection
Author(s): M. B. Reine; S. P. Tobin; P. W. Norton; P. LoVecchio
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Paper Abstract

This paper reviews and assesses progress in back-illuminated P-on-n photovoltaic HgCdTe detector technology, grown by two-layer Liquid Phase Epitaxy on CdZnTe substrates, for applications at wavelengths beyond 15 μm in a new generation of spaceborne multispectral instruments for remote sensing. We review data that demonstrate the feasibility of useful cutoff wavelengths as long as 17.5 μm. We recommend that LPE photovoltaic HgCdTe technology be extended to the 20-25 μm wavelength region for single elements and arrays for NASA remote-sensing applications.

Paper Details

Date Published: 31 May 2005
PDF: 12 pages
Proc. SPIE 5783, Infrared Technology and Applications XXXI, (31 May 2005); doi: 10.1117/12.601941
Show Author Affiliations
M. B. Reine, BAE Systems (United States)
S. P. Tobin, BAE Systems (United States)
P. W. Norton, BAE Systems (United States)
P. LoVecchio, BAE Systems (United States)

Published in SPIE Proceedings Vol. 5783:
Infrared Technology and Applications XXXI
Bjorn F. Andresen; Gabor F. Fulop, Editor(s)

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