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Proceedings Paper

Modeling of injection-induced conductivity effects in light-emitting and laser diodes
Author(s): P. G. Eliseev
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Paper Abstract

The nonlinear contribution into the diode resistance in addition to the nonlinearity of injecting p-n junction is considered associated with a carrier injection into some nominally passive regions adjacent to the active region of the device (effect of the injection-induced conductivity, IIC). A condition the IIC to give a substantial contribution is availability of resistive passive layer or depleted layer in the diode chip that can be undergone to a conductivity modification by carrier injection and leakeage. There are some consequences that look like unusual features: (i) anomaously large the non-ideality factor of I-V curve; (ii) anomalous electrical response on the variation of the optical feedback in the laser diode device; (iii) anomalous sign of the threshold-related kink of the differential resistance of laser diode.

Paper Details

Date Published: 28 April 2005
PDF: 8 pages
Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); doi: 10.1117/12.601819
Show Author Affiliations
P. G. Eliseev, Univ. of New Mexico (United States)
P.N. Lebedev Physical Institute (Russia)


Published in SPIE Proceedings Vol. 5722:
Physics and Simulation of Optoelectronic Devices XIII
Marek Osinski; Fritz Henneberger; Hiroshi Amano, Editor(s)

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