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Proceedings Paper

Study of 157 nm resists with full field exposure tools
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Paper Abstract

A detailed account will be given of work done on the Micrascan VII (NA 0.75) at INVENT in Albany with AZ EXP X20 and AZ EXP X25 resist systems based upon BOCME protected fluoroalcohol resins. These resins were examined either with a high or low level of formulated photoacid generator (PAG). Our evaluations done both with binary and alternating phase shift mask exposures. It was found in our initial studies done at relatively high amine levels (1-2 ppb) that AZ EXP X25 X with low PAG gave the best performance.

Paper Details

Date Published: 4 May 2005
PDF: 12 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.601811
Show Author Affiliations
Yayi Wei, Infineon Technologies (United States)
Nickolay Stepanenko, Infineon Technologies AG (Germany)
Michael Sebald, Infineon Technologies AG (Germany)
Christoph Hohle, Infineon Technologies AG (Germany)
Francis M. Houlihan, AZ Electronic Materials (United States)
Raj Sakamuri, AZ Electronic Materials (United States)
Alla Dimerli, AZ Electronic Materials (United States)
Andrew Romano, AZ Electronic Materials (United States)
Ralph R. Dammel, AZ Electronic Materials (United States)


Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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