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Proceedings Paper

Study of barrier coats for protection against airborne contamination in 157-nm lithography
Author(s): Francis Houlihan; Raj Sakamuri; Keino Hamilton; Alla Dimerli; David Rentkiewicz; Andrew Romano; Ralph R. Dammel; Yayi Wei; Nickolay Stepanenko; Michael Sebald; Christoph Hohle; Will Conley; Daniel Miller; Toshiro Itani; Masato Shigematsu; Etsuro Kawaguchi
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Paper Abstract

We summarize our work on devising protective barrier coats for use against airborne contamination when using tert-butoxycarbonylmethyl (BOCME) capped fluoroalcohol resist resins as part of our strategy to develop a 157 nm resist platform. We will describe how a barrier coat (AZ EXP FX Coating 145) consisting of a fluoro-cyclopolymer formulation, soluble in aqueous developer, can improve the post-exposure delay (PED) latitude of 157 nm resist resists exposed under conditions or airborne contamination. Specifically, a 20 nm thick coating of AZ EXP FX Coating 145 gives a PED latitude for L/S features of at least 10 min under condition of airborne amine contamination (10 ppb amine contamination). The barrier coat, AZ EXP FX coating 145 is formulated in a solvent which is compatible with resist film coated from typical 193 nm resist spin casting solvents. Moreover, it can be easily removed as part of the normal aqueous base development scheme, no extra post-apply bake or stripping step is required.

Paper Details

Date Published: 4 May 2005
PDF: 14 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.601810
Show Author Affiliations
Francis Houlihan, AZ Electronic Materials (United States)
Raj Sakamuri, AZ Electronic Materials (United States)
Keino Hamilton, AZ Electronic Materials (United States)
Alla Dimerli, AZ Electronic Materials (United States)
David Rentkiewicz, AZ Electronic Materials (United States)
Andrew Romano, AZ Electronic Materials (United States)
Ralph R. Dammel, AZ Electronic Materials (United States)
Yayi Wei, Infineon Technologies (United States)
Nickolay Stepanenko, Infineon Technologies AG (Germany)
Michael Sebald, Infineon Technologies AG (Germany)
Christoph Hohle, Infineon Technologies AG (Germany)
Will Conley, SEMATECH, Inc. (United States)
Daniel Miller, SEMATECH, Inc. (United States)
Toshiro Itani, Semiconductor Leading Edge Technologies, Inc. (Japan)
Masato Shigematsu, Semiconductor Leading Edge Technologies, Inc. (Japan)
Etsuro Kawaguchi, Semiconductor Leading Edge Technologies, Inc. (Japan)


Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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