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Proceedings Paper

A dual-rate optical transceiver for power-on-demand operation
Author(s): Yongrong Zuo; Fouad Kiamilev; Xiaoqing Wang; Ping Gui; Xingle Wang; Jeremy Ekman; Michael McFadden; Michael Haney
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Paper Abstract

This work describes a dual-rate optical transceiver designed for power-efficient connections within and between modern high-speed digital systems. The transceiver can dynamically adjust its data rate according to the performance requirements, allowing for power-on-demand operation. To implement dual rate functionality, the transmitter and receiver circuits include separate high-speed and low-power datapath modules. The high-speed module is designed for gigabit operation and optimized to achieve the maximum bandwidth. A simpler low-power module is designed for megabit data transmission and optimized for low power consumption. The transceiver was fabricated with a 0.5μm Silicon-on-Sapphire (SOS) CMOS technology. The vertical cavity surface-emitting lasers (VCSELs) and photodetector devices were attached to the transceiver IC using flip-chip bonding. A free-space optical link system was set up to demonstrate power-on-demand capability. Experimental results show reliable link operations at 2Gb/s and 100Mb/s data transfer rates with about 104mW and 9mW power consumption, respectively. The transceiver’s switching time between these two data rates was demonstrated at 10μs which was limited by on-chip register reconfiguration time. Improvement of this switching time can be obtained by using dedicated IO pads for dual-rate control signals. At the circuit level, the incorporation of dual rate functionality into a typical gigabit optical transceiver would require 255 additional MOS transistors.

Paper Details

Date Published: 7 March 2005
PDF: 12 pages
Proc. SPIE 5730, Optoelectronic Integration on Silicon II, (7 March 2005); doi: 10.1117/12.601767
Show Author Affiliations
Yongrong Zuo, Univ. of Delaware (United States)
Fouad Kiamilev, Univ. of Delaware (United States)
Xiaoqing Wang, Univ. of Delaware (United States)
Ping Gui, Univ. of Delaware (United States)
Xingle Wang, Univ. of Delaware (United States)
Jeremy Ekman, Univ. of Delaware (United States)
Michael McFadden, Univ. of Delaware (United States)
Michael Haney, Univ. of Delaware (United States)

Published in SPIE Proceedings Vol. 5730:
Optoelectronic Integration on Silicon II
Joel A. Kubby; Ghassan E. Jabbour, Editor(s)

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