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Proceedings Paper

High transmission mask technology for 45nm node imaging
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Paper Abstract

The lithography prognosticator of the early 1980’s declared the end of optics for sub-0.5μm imaging. However, significant improvements in optics, photoresist and mask technology continued through the mercury lamp lines (436, 405 & 365nm) and into laser bands of 248nm and to 193nm. As each wavelength matured, innovative optical solutions and further improvements in photoresist technology have demonstrated that extending imaging resolution is possible thus further reducing k1. Several authors have recently discussed manufacturing imaging solutions for sub-0.3k1 and the integration challenges. The requirements stated in the ITRS roadmap for current and future technology nodes are very aggressive. Therefore, it is likely that high NA in combination with enhancement techniques will continue further for aggressive imaging solutions. Lithography and more importantly “imaging solutions” are driven by economics. The technology might be extremely innovative and “fun”, however, if it's too expensive it may never see the light of scanner. The authors have investigated and compared the capability of high transmission mask technology and image process integration for the 45nm node. However, the results will be graded in terms of design, mask manufacturability, imaging performance and overall integration within a given process flow.

Paper Details

Date Published: 12 May 2004
PDF: 6 pages
Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2004); doi: 10.1117/12.601584
Show Author Affiliations
Will Conley, Freescale Semiconductor (United States)
Mike Cangemi, Photronics, Inc. (United States)
Bryan S. Kasprowicz, Photronics, Inc. (United States)
Matt Lassiter, Photronics, Inc. (United States)
Lloyd C. Litt, Freescale Semiconductor (United States)
Marc Cangemi, Photronics, Inc. (United States)
Rand Cottle, Photronics, Inc. (United States)
Mark Smith, Photronics, Inc. (United States)
Wei Wu, Freescale Semiconductor (United States)
Jonathan Cobb, Freescale Semiconductor (United States)
Rusty Carter, Freescale Semiconductor (United States)
Young-mog Ham, Photronics, Inc. (United States)
Kevin Lucas, Freescale Semiconductor (France)
Bernie Roman, Freescale Semiconductor (United States)
Chris Progler, Photronics, Inc. (United States)


Published in SPIE Proceedings Vol. 5754:
Optical Microlithography XVIII
Bruce W. Smith, Editor(s)

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