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Proceedings Paper

Defect printability and inspectability of Cr-less phase-shift masks for the 70nm node
Author(s): J. Heumann; J. Schramm; A. Birnstein; K. T. Park; T. Witte; N. Morgana; M. Hennig; R. Pforr; J. Thiele; N. Schmidt; C. Aquino
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Paper Abstract

A chrome-less phase-shift mask for the 70nm technology was designed and manufactured. The mask contains “lines and spaces” including programmed defects. Each defect was characterized with respect to the critical dimension (CD) variation on wafer, defect size, aerial image deviation, as well as inspection capture rate. It was found that defects with an AIMS intensity deviation of above 9 % are to be considered critical. The corresponding critical defect size is dependent on the defect type. All lithographically significant mask defects were found reliably using a KLA 576 inspection tool.

Paper Details

Date Published: 12 May 2004
PDF: 7 pages
Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2004); doi: 10.1117/12.601568
Show Author Affiliations
J. Heumann, Advanced Mask Technology Ctr. (Germany)
J. Schramm, Advanced Mask Technology Ctr. (Germany)
A. Birnstein, Advanced Mask Technology Ctr. (Germany)
K. T. Park, DPI/Advanced Mask Technology Ctr. (Germany)
T. Witte, Advanced Mask Technology Ctr. (Germany)
N. Morgana, Infineon Technologies AG (Germany)
M. Hennig, Infineon Technologies AG (Germany)
R. Pforr, Infineon Technologies AG (Germany)
J. Thiele, Infineon Technologies AG (Germany)
N. Schmidt, KLA-Tencor Corp. (United States)
C. Aquino, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 5754:
Optical Microlithography XVIII
Bruce W. Smith, Editor(s)

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