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Proceedings Paper

Electron beam direct write lithography flexibility for ASIC manufacturing: an opportunity for cost reduction
Author(s): L. Pain; M. Jurdit; J. Todeschini; S. Manakli; B. Icard; B. Minghetti; G. Bervin; A. Beverina; F. Leverd; M. Broekaart; P. Gouraud; V. De Jonghe; Ph. Brun; S. Denorme; F. Boeuf; V. Wang; D. Henry
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Paper Abstract

With the strong increase of mask complexity and associated price for each new technology node, mask less lithography represents more and more an interesting and complementary alternative for ASIC manufacturing especially in the fields of low volume and leading eadge technology applications. In the semiconductor business where prices and cycle time are constantly pressured, the capability and flexibility of the electron beam direct write offer an effective real cost and cycle time opportunity thanks to its high-resolution capability but also to its ability to print, modify or correct design everywhere in a circuit. This paper highlights application examples where the advantages of this lithography solution are demonstrated for advanced research and development application with the patterning of 45 nm SRAM and for the fast validation of architecture designs. This work confirms that mask less lithography can be transparently placed into production environment, in association with the "golden" optical lithography reference.

Paper Details

Date Published: 6 May 2005
PDF: 11 pages
Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); doi: 10.1117/12.601498
Show Author Affiliations
L. Pain, CEA-LETI/Grenoble (France)
M. Jurdit, CEA-LETI/Grenoble (France)
J. Todeschini, Philips Semiconductors (France)
S. Manakli, STMicroelectronics (France)
B. Icard, CEA-LETI/Grenoble (France)
B. Minghetti, STMicroelectronics (France)
G. Bervin, STMicroelectronics (France)
A. Beverina, STMicroelectronics (France)
F. Leverd, STMicroelectronics (France)
M. Broekaart, Philips Semiconductors (France)
P. Gouraud, STMicroelectronics (France)
V. De Jonghe, Philips Semiconductors (France)
Ph. Brun, CEA-LETI/Grenoble (France)
S. Denorme, STMicroelectronics (France)
F. Boeuf, STMicroelectronics (France)
V. Wang, Freescale Semiconductor (France)
D. Henry, STMicroelectronics (France)

Published in SPIE Proceedings Vol. 5751:
Emerging Lithographic Technologies IX
R. Scott Mackay, Editor(s)

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