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Proceedings Paper

Simulations of immersion lithography
Author(s): Min Bai; Junjiang Lei; Lin Zhang; James P. Shiely
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Paper Abstract

Immersion lithography has been regarded as the most viable contender to extend the resolution capability of optical lithography using 193nm wavelength. In parallel with the tremendous effort of overcoming the engineering challenges in immersion, support from modeling and simulations is strongly needed. Although immersion simulation has become available through a number of simulation tools, we need to investigate the model generation and its compatibility within the context of full-chip optical proximity correction (OPC). In this paper, we will describe the physics of a full vector model that is necessary for the high NA optical modeling under immersion. In this full vector model, we consider not only the plane wave decomposition as light travels from the mask to wafer plane, but also the refraction, transmission and reflection of light through a thin film stack on the wafer. We integrated this comprehensive vector model into Synopsys OPC modeling tool ProGen. Through ProGen simulation results, we will discuss several important merits of immersion lithography, as well as the full portability of immersion models into OPC process flow.

Paper Details

Date Published: 12 May 2004
PDF: 8 pages
Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2004); doi: 10.1117/12.601497
Show Author Affiliations
Min Bai, Synopsys Inc. (United States)
Junjiang Lei, Synopsys Inc. (United States)
Lin Zhang, Synopsys Inc. (United States)
James P. Shiely, Synopsys Inc. (United States)


Published in SPIE Proceedings Vol. 5754:
Optical Microlithography XVIII
Bruce W. Smith, Editor(s)

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