Share Email Print
cover

Proceedings Paper

ArF-resist line width slimming variation with threshold level in high precision CD-SEM measurement
Author(s): Hiroki Kawada; Yuki Ojima
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Line width slimming (LWS) occurring in ArF photo-resist is measured with various threshold levels. The LWS decreases as the threshold level decrease, with electron’s landing voltage (Ve) = 800 V. Contrary to this, with Ve = 300 V the LWS slightly increases as the threshold level decrease. The line edge detected by threshold = 20% locates in the sidewall where the elevation angle is nearly zero, whilst the line edge by threshold = 80% locates in the top corner where the elevation angle is more than 30 degrees. To estimate the electron dose that is sensitive to the elevation angle of the incident electron, we used an in-house made Monte Carlo simulator. The LWS variation with the threshold level can be explained by calculated electron dose ratio that is sensitive to the elevation angle.

Paper Details

Date Published: 10 May 2005
PDF: 5 pages
Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); doi: 10.1117/12.601428
Show Author Affiliations
Hiroki Kawada, Hitachi High-Technologies Corp. (Japan)
Yuki Ojima, Hitachi High-Technologies Corp. (Japan)


Published in SPIE Proceedings Vol. 5752:
Metrology, Inspection, and Process Control for Microlithography XIX
Richard M. Silver, Editor(s)

© SPIE. Terms of Use
Back to Top