Share Email Print
cover

Proceedings Paper

Full chip model based correction of flare-induced linewidth variation
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Scattered light in optical lithography, also known as flare, has been shown to cause potentially significant linewidth variation at low-k1 values. The interaction radius of this effect can extend essentially from zero to the full range of a product die and beyond. Because of this large interaction radius the correction of the effect can be very computation-intensive. In this paper, we will present the results of our work to characterize the flare effect for 65nm and 90nm poly processes, model that flare effect as a summation of gaussian convolution kernels, and correct it within a hierarchical model based OPC engine. Novel methods for model based correction of the flare effect, which preserve much of the design hierarchy, is discussed. The same technique has demonstrated the ability to correct for long-range loading effects encountered during the manufacture of reticles.

Paper Details

Date Published: 12 May 2004
PDF: 11 pages
Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2004); doi: 10.1117/12.601182
Show Author Affiliations
James Word, Mentor Graphics Corp. (United States)
Jerome Belledent, Philips Semiconductors (France)
Yorick Trouiller, STMicroelectronics (France)
Yuri Granik, Mentor Graphics Corp. (United States)
Olivier Toublan, Mentor Graphics Corp. (United States)
Wilhelm Maurer, Infineon Technologies (Germany)


Published in SPIE Proceedings Vol. 5754:
Optical Microlithography XVIII
Bruce W. Smith, Editor(s)

© SPIE. Terms of Use
Back to Top