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Proceedings Paper

Optimization of geometry of alignment mark using rigorous coupled-wave analysis (RCWA)
Author(s): Roman Chalykh; Seong-Sue Kim; Sang-Gyun Woo; Han-Ku Cho; Joo-Tae Moon
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Paper Abstract

Simulation works are reported for the optimization of alignment mark geometries to enhance the magnitude of alignment signal and to improve precision of alignment and overlay process. Modeling of diffraction of electromagnetic wave on alignment mark is based on rigorous coupled-wave analysis (RCWA). This simulation allows calculating of overlay signal and optimizing of alignment mark. Using of RCWA approach significantly decreases computational time and required memory size comparing with FDTD. Overlay signal is usually measured using one of the diffraction orders. Thus the great advantage of using RCWA instead of FDTD is possibility to find amplitude of this diffracted order directly.

Paper Details

Date Published: 10 May 2005
PDF: 9 pages
Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); doi: 10.1117/12.601142
Show Author Affiliations
Roman Chalykh, Samsung Electronics Co., Ltd. (South Korea)
Seong-Sue Kim, Samsung Electronics Co., Ltd. (South Korea)
Sang-Gyun Woo, Samsung Electronics Co., Ltd. (South Korea)
Han-Ku Cho, Samsung Electronics Co., Ltd. (South Korea)
Joo-Tae Moon, Samsung Electronics Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 5752:
Metrology, Inspection, and Process Control for Microlithography XIX
Richard M. Silver, Editor(s)

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