Share Email Print
cover

Proceedings Paper

An investigation of a new generation of progressive mask defects on the pattern side of advanced photomasks
Author(s): Kaustuve Bhattacharyya; Mark Eickhoff; Brian Grenon; Mark Ma; Sylvia Pas
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

DUV lithography has introduced a progressive mask defect growth problem widely known as crystal growth or haze. Even when incoming mask quality is high, there is no guarantee that the mask will remain clean during its production usage in the wafer fab. These progressive defects must be caught early during production in the fabs. In the absence of a solution for the defect’s root cause, the ideal reticle quality control goal should be to detect and monitor any nascent progressive defects before they become yield limiting. Most of the work published so far has been focused on crystals on clear area (on the pattern surface) and on the back-glass of the mask. But there is a new generation of growing defects: crystals that grow on the half tone (MoSi) film or on the chrome film, on the pattern side of the mask. It is believed that the formation mechanisms and rates are different for these new types of crystals. This work becomes more important with the impact of such defects’ instability on masks in volume production. The purpose of this investigation is to improve manufacturability of PSM’s through haze contamination reduction and to understand the impact and dependency of this contamination on die yield, on reticle lifetime, and on usage patterns.

Paper Details

Date Published: 10 May 2005
PDF: 9 pages
Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); doi: 10.1117/12.601010
Show Author Affiliations
Kaustuve Bhattacharyya, KLA-Tencor Corp. (United States)
Mark Eickhoff, KLA-Tencor Corp. (United States)
Brian Grenon, Grenon Consulting (United States)
Mark Ma, Texas Instruments Inc. (United States)
Sylvia Pas, Texas Instruments Inc. (United States)


Published in SPIE Proceedings Vol. 5752:
Metrology, Inspection, and Process Control for Microlithography XIX
Richard M. Silver, Editor(s)

© SPIE. Terms of Use
Back to Top