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Proceedings Paper

Laser-induced damage threshold comparison of reactive low-voltage ion-plated and e-beam coatings
Author(s): Robert Chow; Christopher J. Stolz; Frank Rainer; Gary E. Loomis; Karl H. Guenther; Bala Subramanian; X. Q. Hu
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Paper Abstract

Single layer coatings of hafnia are included with results obtained with titania, tantala, zirconia and silica. These coatings were deposited by a reactive low voltage ion plating (RLVIP) and conventional reactive e-beam process. Layer thicknesses were optically a A14at 532 nm. The RMS surface roughness changes between the uncoated and coated were on the sub-angstrom level. The spectral transmittance curves demonstrated the material thickness homogeneity aspect of the RLVIP process. Laser damage thresholds were made from high peak power (1.06 .tm and 0.532 jim, 10 ns) and high average power (511 nm and 578 nm) laser damage test facilities. Given a set of coatings from one process, the damage thresholds tended to increase as the refractive index decreased. The e-beam silica coating had the highest damage threshold, exceeding 98 J/cm2 (1.06 jtm, 10 ns, 10 Hz). In addition, the surface absorption and refractive indices of the coatings were measured, and the X-ray diffraction patterns of the hafnia coatings made.

Paper Details

Date Published: 29 July 1992
PDF: 12 pages
Proc. SPIE 1624, Laser-Induced Damage in Optical Materials: 1991, (29 July 1992); doi: 10.1117/12.60093
Show Author Affiliations
Robert Chow, Lawrence Livermore National Lab. (United States)
Christopher J. Stolz, Lawrence Livermore National Lab. (United States)
Frank Rainer, Lawrence Livermore National Lab. (United States)
Gary E. Loomis, Lawrence Livermore National Lab. (United States)
Karl H. Guenther, CREOL/Univ. of Central Florida (United States)
Bala Subramanian, CREOL/Univ. of Central Florida (United States)
X. Q. Hu, CREOL/Univ. of Central Florida (United States)


Published in SPIE Proceedings Vol. 1624:
Laser-Induced Damage in Optical Materials: 1991
Harold E. Bennett; Lloyd L. Chase; Arthur H. Guenther; Brian Emerson Newnam; M. J. Soileau, Editor(s)

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