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Proceedings Paper

High-power injection lock laser platform for ArF dry/wet lithography
Author(s): H. Mizoguchi; T. Inoue; J. Fujimoto; T. Yamazaki; T. Suzuki; T. Matsunaga; S. Sakanishi; M. Kaminishi; Y. Watanabe; T. Ohta; M. Nakane; M. Moriya; T. Nakaike; M. Shinbori; M. Yoshino; T. Kawasuji; H. Nogawa; T. Ito; H. Umeda; S. Tanaka; H. Taniguchi; Y. Sasaki; J. Kinoshita; T. Abe; H. Tanaka; H. Hayashi; K. Miyao; M. Niwano; A. Kurosu; M. Yashiro; H. Nagano; N. Matsui; T. Mimura; K. Kakizaki; M. Goto
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Paper Abstract

193-nm lithography is moving from the pre-production to the mass production phase and its target node is shifting from 90 nm to 65 nm. And now the ArF-immersion technology is spotlighted as the enabling technology for below 45nm node1). 157nm lithography is still important for next generation node below 45 nm as backup technology2). Gigaphoton has already released G40A (20W, 0.35pm) in 2001, G41A (20W, 0.30pm)3) in 2002, G42A (20W, 0.25pm)4) in 2003 to the advanced lithography market. On the other hand, since 1998 we have been developing high power 157nm light source for micro lithography with injection lock technology in research phase5)6). We have demonstrated a 30W, 0.12pm, @157nm line narrowed light source for microlithography with "Injection lock technology"1)2). Based on this injection lock technology, we have successfully developed "GigaTwin", a high power injection lock laser platform for 193nm lithography system. We have already released a high power ultra narrowed ArF laser "GT40A" (45W, 4000Hz, 11.25mJ, 0.18pm), with the GigaTwin platform.

Paper Details

Date Published: 12 May 2004
PDF: 10 pages
Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2004); doi: 10.1117/12.600796
Show Author Affiliations
H. Mizoguchi, Gigaphoton Inc. (Japan)
T. Inoue, Ushio Inc. (Japan)
J. Fujimoto, Komatsu Ltd. (Japan)
T. Yamazaki, Komatsu Ltd. (Japan)
T. Suzuki, Komatsu Ltd. (Japan)
T. Matsunaga, Komatsu Ltd. (Japan)
S. Sakanishi, Komatsu Ltd. (Japan)
M. Kaminishi, Komatsu Ltd. (Japan)
Y. Watanabe, Komatsu Ltd. (Japan)
T. Ohta, Komatsu Ltd. (Japan)
M. Nakane, Komatsu Ltd. (Japan)
M. Moriya, Komatsu Ltd. (Japan)
T. Nakaike, Komatsu Ltd. (Japan)
M. Shinbori, Ushio Inc. (Japan)
M. Yoshino, Ushio Inc. (Japan)
T. Kawasuji, Komatsu Ltd. (Japan)
H. Nogawa, Komatsu Ltd. (Japan)
T. Ito, Komatsu Ltd. (Japan)
H. Umeda, Komatsu Ltd. (Japan)
S. Tanaka, Ushio Inc. (Japan)
H. Taniguchi, Ushio Inc. (Japan)
Y. Sasaki, Ushio Inc. (Japan)
J. Kinoshita, Ushio Inc. (Japan)
T. Abe, Ushio Inc. (Japan)
H. Tanaka, Komatsu Ltd. (Japan)
H. Hayashi, Komatsu Ltd. (Japan)
K. Miyao, Ushio Inc. (Japan)
M. Niwano, Komatsu Ltd. (Japan)
A. Kurosu, Komatsu Ltd. (Japan)
M. Yashiro, Ushio Inc. (Japan)
H. Nagano, Ushio Inc. (Japan)
N. Matsui, Komatsu Ltd. (Japan)
T. Mimura, Komatsu Ltd. (Japan)
K. Kakizaki, Ushio Inc. (Japan)
M. Goto, Komatsu Ltd. (Japan)


Published in SPIE Proceedings Vol. 5754:
Optical Microlithography XVIII
Bruce W. Smith, Editor(s)

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