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Proceedings Paper

Resist materials for advanced lithography
Author(s): Theodore H. Fedynyshyn; Roger F. Sinta; Indira Pottebaum; Alberto Cabral
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Paper Abstract

Increasing the understanding of the fundamental resist material characteristics is a necessary preamble to the development of resists with improved resolution and line edge roughness. Material characteristics will not only influence resist sensitivity and resolution, but also may influence the critical dimension control of the lithography process through its effects on line edge roughness (LER). Polymers with controlled molecular weights and polydispersities as well as several non-polymeric resist materials were prepared and studied. This entailed preparing novel derivatives of these non-polymeric materials that were compatible with photoimaging as positive acid catalyzed resists. Examples are presented where non-polymeric resist materials were isolated into single well-defined components that could be compared to mixtures of similar composition. Results are presented on materials properties such as surface roughness and resist resolution. Included in the results are examples of non-polymeric materials that are capable of sub 100-nm resolution as positive resists.

Paper Details

Date Published: 4 May 2005
PDF: 11 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.600777
Show Author Affiliations
Theodore H. Fedynyshyn, MIT Lincoln Lab. (United States)
Roger F. Sinta, MIT Lincoln Lab. (United States)
Indira Pottebaum, MIT Lincoln Lab. (United States)
Alberto Cabral, MIT Lincoln Lab. (United States)

Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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