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Proceedings Paper

193nm dual layer organic BARCs for high NA immersion lithography
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Paper Abstract

Extending the resolution capability of 193nm lithography through the implementation of immersion has created new challenges for ArF B.A.R.C.s. The biggest of which will be controlling reflectivity over a wider range of incident angles of the incoming imaging rays. An optimum B.A.R.C. thickness will depend on the angle of incidence of the light in the B.A.R.C. and will increase as the angle increases. At high angles different polarization have different optimum thicknesses. These confounding effects will make it increasingly difficult to control reflectivity over a range of angles through interference effects within a single homogenous B.A.R.C. Unlike single layer B.A.R.C.s, multilayer B.A.R.C.s are capable of suppressing reflectivity through a wide range of incident angles. In fact, remarkable improvements in antireflective properties can be achieved with respect to CD control and through angle performance with the simplest form of a multilayer B.A.R.C., a dual layer. Here we discuss the attributes of an all organic dual layer B.A.R.C. through simulations and preliminary experiments. One attribute of an organic over inorganic B.A.R.C. in high-NA lithography is its ability to planarize topography. ArF scanners designed to meet the needs of the 45nm node will have a very small depth-of-focus (DOF) which will require planar surfaces.

Paper Details

Date Published: 4 May 2005
PDF: 19 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.600736
Show Author Affiliations
David J. Abdallah, AZ Electronic Materials (United States)
Mark Neisser, AZ Electronic Materials (United States)
Ralph R. Dammel, AZ Electronic Materials (United States)
Georg Pawlowski, AZ Electronic Materials (United States)
S. Ding, AZ Electronic Materials (United States)
Francis M. Houlihan, AZ Electronic Materials (United States)
Andrew R. Romano, AZ Electronic Materials (United States)
J. J. Biafore, Physical Simulation & Modeling (United States)
Alex Raub, Univ. of New Mexico (United States)

Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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