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Proceedings Paper

Lithographic measurement of EUV flare in the 0.3-NA micro exposure tool optic at the Advanced Laser Source
Author(s): Jason P. Cain; Patrick Naulleau; Costas J. Spanos
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Paper Abstract

The level of flare present in a 0.3-NA EUV optic (the MET optic) at the Advanced Light Source at Lawrence Berkeley National Laboratory is measured using a lithographic method. Photoresist behavior at high exposure doses makes analysis difficult. Flare measurement analysis under scanning electron microscopy (SEM) and optical microscopy is compared, and optical microscopy is found to be a more reliable technique. In addition, the measured results are compared with predictions based on surface roughness measurement of the MET optical elements. When the fields in the exposure matrix are spaced far enough apart to avoid influence from surrounding fields and the data is corrected for imperfect mask contrast and aerial image proximity effects, the results match predicted values quite well. The amount of flare present in this optic ranges from 4.7% for 2 mm features to 6.8% for 500 nm features.

Paper Details

Date Published: 6 May 2005
PDF: 11 pages
Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); doi: 10.1117/12.600620
Show Author Affiliations
Jason P. Cain, Univ. of California/Berkeley (United States)
Patrick Naulleau, Lawrence Berkeley National Lab. (United States)
Costas J. Spanos, Univ. of California/Berkeley (United States)

Published in SPIE Proceedings Vol. 5751:
Emerging Lithographic Technologies IX
R. Scott Mackay, Editor(s)

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