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Proceedings Paper

Molecular resists based on polyhedral oligomeric silsesquioxanes (POSS)
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Paper Abstract

Polyhedral Oligomeric Silsesquioxane (POSS) derivatives have been investigated as potential candidates for high resolution resists. POSS materials are cage compounds with defined mono-disperse molecular weights. These materials are attractive candidates for molecular resist development because of their commercial availability and the ease with which they can be derivatized. These resists are more suited for bilayer resist applications because of their high silicon content. We have developed positive bilayer resists suitable for 193-nm and other emerging lithographic applications.

Paper Details

Date Published: 4 May 2005
PDF: 9 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.600615
Show Author Affiliations
Ratnam Sooriyakumaran, IBM Almaden Research Ctr. (United States)
Hoa Truong, IBM Almaden Research Ctr. (United States)
Linda Sundberg, IBM Almaden Research Ctr. (United States)
Mark Morris, IBM Almaden Research Ctr. (United States)
Bill Hinsberg, IBM Almaden Research Ctr. (United States)
Hiroshi Ito, IBM Almaden Research Ctr. (United States)
Robert Allen, IBM Almaden Research Ctr. (United States)
Wu-Song Huang, IBM Microelectronics Div. (United States)
Dario Goldfarb, IBM T.J. Watson Research Ctr. (United States)
Sean Burns, IBM T.J. Watson Research Ctr. (United States)
Dirk Pfeiffer, IBM T.J. Watson Research Ctr. (United States)


Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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