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Proceedings Paper

EUV mask blank readiness for 45-nm HP 2009 manufacturing
Author(s): Phil Seidel
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Paper Abstract

For successful commercialization of Extreme Ultraviolet (EUV) lithography essentially defect free mask blanks are required by 2009 for the 45nm Half Pitch (HP). SEMATECH has been engaging with the mask blank materials and tool supplier community for several years and has evaluated rates of improvements against the needed alpha, beta, and production performance levels required to support EUV lithography introduction in 2009. Significant improvements in many performance levels must be achieved with simultaneous specifications including defectivity, reflectivity, wavelength control, and buffer / absorber stack performances. Although some commercial capability exists today for limited "alpha" level grade blank materials there are several orders of magnitude improvement needed in defectivity levels coupled with defect size detection sensitivity. Although coordinated regional development programs for mask blanks have high effort levels rapid improvements are required to meet the 45nm HP timing in 2009 that is just 5 short years away. Traditional supplier rates of improvements may not be enough to meet the need by 2009. This paper will illustrate the general rate of improvements and further developments or innovative solutions that may be needed in several areas. The SEMATECH EUV mask blank development roadmap will be reviewed with SEMATECH's perspective of commercial readiness predictions by 2009.

Paper Details

Date Published: 6 May 2005
PDF: 12 pages
Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); doi: 10.1117/12.600544
Show Author Affiliations
Phil Seidel, SEMATECH (United States)


Published in SPIE Proceedings Vol. 5751:
Emerging Lithographic Technologies IX
R. Scott Mackay, Editor(s)

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