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Proceedings Paper

Quantification of EUV resist outgassing
Author(s): Wang Yueh; Heidi B. Cao; Vani Thirumala; Hokkin Choi
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Paper Abstract

Outgassing from EUV photoresists under EUV irradiation must be minimal in order to prevent contamination of EUV optics. A better understanding of both the level of outgassing of current EUV resists, and the effect of outgassing on EUV optics is needed to set outgassing targets and to assess the risk of resist outgassing in EUV tools. In this paper, we document a technique for quantifying the EUV resist outgassing using both internal and external standards to baseline the GC/MS. In a comparison of internal and external standard, the two techniques give consistent baseline results. Quantification of the outgassing of a number of experimental EUV photoresists shows outgassing levels of 1E+10 - 1E+15 molecules/cm2 at the relevant lithographic dose. Protecting groups and PAG fragments are identified as the main outgassing components. The use of high activation energy resists, and non-ionic PAGs are identified as possible methods to reduce the outgassing levels of EUV photoresists.

Paper Details

Date Published: 4 May 2005
PDF: 6 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.600540
Show Author Affiliations
Wang Yueh, Intel Corp. (United States)
Heidi B. Cao, Intel Corp. (United States)
Vani Thirumala, Intel Corp. (United States)
Hokkin Choi, Intel Corp. (United States)


Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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