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Proceedings Paper

Performance of EUV photoresists on the ALS micro exposure tool
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Paper Abstract

The new high NA (0.3) Micro Exposure Tool at the Advanced Light Source (MET@ALS) at Lawrence Berkeley National Laboratories provides the first opportunity to evaluate the ultimate resolution capabilities of chemically amplified resists using EUV lithography. We characterized the imaging capabilities of a well-known tool-test resist (EUV-2D, XP98248B) and a new high resolution resist (MET-1K, XP3454C). Emphasis was placed on evaluating resists for focus and exposure latitude at 50 nm dense and isolated lines. MET-1K is capable of resolving 30 nm lines and shows modulation in 25 nm dense lines. We describe some early process optimization experiments using MET-1K that show further advances in lithographic capability. Another new series of resists (MET-2A, 2B, 2C, 2D) also show great promise for good resolution, LER and sensitivity.

Paper Details

Date Published: 4 May 2005
PDF: 11 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.600511
Show Author Affiliations
Thomas Koehler, Rohm and Haas Electronic Materials (United States)
Robert L. Brainard, Rohm and Haas Electronic Materials (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)
David Van Steenwinckel, Philips Research Leuven (Belgium)
Jeroen H. Lammers, Philips Research Leuven (Belgium)
Kenneth A. Goldberg, Lawrence Berkeley National Lab. (United States)
Joseph F. Mackevich, Rohm and Haas Electronic Materials (United States)
Peter Trefonas, Rohm and Haas Electronic Materials (United States)


Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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