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Proceedings Paper

The evaluation of aberration effects according to pattern shape and duty ratio
Author(s): Ji-Eun Lee; Seung-Wook Park; Chang-Ho Lee; Hyun-Wook Oh; So-Yoon Bae; Hye-Keun Oh
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Paper Abstract

The most important issue in lithography as a semiconductor process is to obtain the minimum resolution. In order to obtain the minimum resolution with processible depth of focus, the numerical aperture is gradually increased and the exposure wavelength is also decreased. The effect of aberration is also increased as a result. It was not much needed to consider the aberration effects for the critical dimensions (CD) greater than around 300 nm. However, it is greatly necessary to consider the effect of aberration for CDs smaller than 100 nm in order to obtain the best process condition. The purpose of this study is to evaluate the aberration effect of the projection system for the specified node and shape of pattern. Evaluation is made by comparing the various aberration effects for the different exposure wavelengths, different shapes such as isolated, line and space, contact hole and L-shaped patterns, and also for the duty ratio by using commercial lithography simulator, SOLID-C [1].

Paper Details

Date Published: 12 May 2004
PDF: 12 pages
Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2004); doi: 10.1117/12.600470
Show Author Affiliations
Ji-Eun Lee, Hanyang Univ. (South Korea)
Seung-Wook Park, Hanyang Univ. (South Korea)
Chang-Ho Lee, Hanyang Univ. (South Korea)
Hyun-Wook Oh, Hanyang Univ. (South Korea)
So-Yoon Bae, Hanyang Univ. (South Korea)
Hye-Keun Oh, Hanyang Univ. (South Korea)


Published in SPIE Proceedings Vol. 5754:
Optical Microlithography XVIII
Bruce W. Smith, Editor(s)

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