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Proceedings Paper

Study on the shoreline for water immersion ArF lithography
Author(s): Chang-Moon Lim; Tae-Seung Eom; Seo-Min Kim; Cheolkyu Bok; Won-Kwang Ma; Gyu-Dong Park; Seung-Chan Moon; Jin-Woong Kim
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Paper Abstract

Though speculation on immersion is ignited by the possibility in realization of hyper NA lithography system which will have NA> 1.0, it is thought that the immersion era might come earlier even in ≤1.0 NA regime because of great benefit in increasing DOF. On the other hand, questions are still laid on maturity or reliability issues such as lens contamination, bubble defects, overlay control and so forth. The main subject of this paper is how to find the appropriate time for introduction of immersion. Basic performance of immersion lithography in 80nm DRAM is compared with that of conventional dry lithography through experiment and simulation. Result of simulation is quite well matched with that of the experiment, and therefore we can investigate the limit of conventional dry lithography based on the simulation results.60nm node might be remained as a last regime for conventional dry lithography by virtue of polarized illumination, and we can expect the shoreline beyond there.

Paper Details

Date Published: 12 May 2004
PDF: 7 pages
Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2004); doi: 10.1117/12.600455
Show Author Affiliations
Chang-Moon Lim, Hynix Semiconductor Inc. (South Korea)
Tae-Seung Eom, Hynix Semiconductor Inc. (South Korea)
Seo-Min Kim, Hynix Semiconductor Inc. (South Korea)
Cheolkyu Bok, Hynix Semiconductor Inc. (South Korea)
Won-Kwang Ma, Hynix Semiconductor Inc. (South Korea)
Gyu-Dong Park, Hynix Semiconductor Inc. (South Korea)
Seung-Chan Moon, Hynix Semiconductor Inc. (South Korea)
Jin-Woong Kim, Hynix Semiconductor Inc. (South Korea)


Published in SPIE Proceedings Vol. 5754:
Optical Microlithography XVIII
Bruce W. Smith, Editor(s)

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