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Proceedings Paper

Development of electron beam resists based on amorphous polyphenols with low molecular weight and narrow dispersion
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Paper Abstract

We have investigated the possibility of amorphous low molecular weight polyphenols as a chemically amplified positive-tone electron-beam (EB) resist. Low molecular weight polyphenol, 4'4-methylenebis{2-[di(2-methyl-4-hydroxy-5-cyclohexylphenyl)]methyl} phenol (3M6C-MBSA) as a base matrix, was protected by 1-ethoxyethyl (EE) groups to control the dissolution rate in 0.26 N tetramethylammonium hydroxide aq. developer. The film distribution in the depth direction for resist components with a Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) and the Fourier amplitude spectra of line-edge roughness (LER) have been investigated to understand the relationship between them for the resists formulated with 3M6C-MBSA and two types of photo acid generator (PAG), triphenylsulfonium perfluoro-1-butanesulfonate (TPS-PFBS) and triphenylsulfonium n-octanesulfonate (TPS-nOS). From these results, it was found that the resist film consisting of TPS-nOS showed more homogeneous in the depth film distribution than that with TPS-PFBS, and the resist with TPS-nOS also indicated the suppressed LER value of 5.1 nm in the wide frequency range. Therefore, the homogeneity of the resist film may affect the pattern LER.

Paper Details

Date Published: 4 May 2005
PDF: 8 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.600416
Show Author Affiliations
Taku Hirayama, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Daiju Shiono, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Shogo Matsumaru, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Toshiyuki Ogata, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Hideo Hada, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Junichi Onodera, Tokyo Ohka Kogyo Co., Ltd. (Japan)
Tadashi Arai, Hitachi, Ltd. (Japan)
Toshio Sakamizu, Hitachi, Ltd. (Japan)
Atsuko Yamaguchi, Hitachi, Ltd. (Japan)
Hiroshi Shiraishi, Hitachi, Ltd. (Japan)
Hiroshi Fukuda, Hitachi, Ltd. (Japan)
Mitsuru Ueda, Tokyo Institute of Technology (Japan)

Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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