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Proceedings Paper

Global planarization of gap-filling process for low-k dual damascene applications
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Paper Abstract

Planarization of gap-filling materials for low-k dual damascene processes is getting more and more important due to the photoresist process window shrinking as the pitch and critical dimensions shrink. Defects, especially pattern collapses, will become a serious problem if there is no global planarization for low-k dual damascene processes. IC manufacturers and materials vendors have proposed several ways to improve the global planarization of gap filling, such as using materials with different viscosities, fine tuning gap-filling material coating recipes, and even using optical or chemical treatments to obtain global planarization. The effect of the different conformalities of the first and second coating materials on coating performance will be discussed.

Paper Details

Date Published: 4 May 2005
PDF: 12 pages
Proc. SPIE 5753, Advances in Resist Technology and Processing XXII, (4 May 2005); doi: 10.1117/12.600408
Show Author Affiliations
Ruei Hung Hsu, United Microelectronics Corp. (Taiwan)
I. H. Huang, United Microelectronics Corp. (Taiwan)
Ling Chieh Lin, United Microelectronics Corp. (Taiwan)
Benjamin Szu-Min Lin, United Microelectronics Corp. (Taiwan)

Published in SPIE Proceedings Vol. 5753:
Advances in Resist Technology and Processing XXII
John L. Sturtevant, Editor(s)

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