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Proceedings Paper

Line width variation with absorber thickness in extreme ultraviolet lithography
Author(s): Young-Doo Jeon; Min-Ki Choi; Eun-Jin Kim; Jong-Sun Kim; Hye-Keun Oh
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Paper Abstract

Selectivity of extreme ultra-violet lithography mask's material and thickness significantly influences on pattern formation. Since the reflectance changes periodically depending on absorber thickness, we investigated the absorber thickness effect on to near field and aerial image for 32 nm line/space and isolated pattern. We chose germanium and chromium as absorber materials. We also investigated the line width variation by absorber thickness change with different duty ratios. SOLID-EUV of sigma-C was used for this study.

Paper Details

Date Published: 6 May 2005
PDF: 8 pages
Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); doi: 10.1117/12.600406
Show Author Affiliations
Young-Doo Jeon, Hanyang Univ. (South Korea)
Min-Ki Choi, Hanyang Univ. (South Korea)
Eun-Jin Kim, Hanyang Univ. (South Korea)
Jong-Sun Kim, Hanyang Univ. (South Korea)
Hye-Keun Oh, Hanyang Univ. (South Korea)

Published in SPIE Proceedings Vol. 5751:
Emerging Lithographic Technologies IX
R. Scott Mackay, Editor(s)

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