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Proceedings Paper

Usage of profile information obtained with scatterometry
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Paper Abstract

Scatterometry, a non-destructive optical metrology, provides information on cross-sectional pattern profiles, including pattern height, sidewall angle and linewidth. Compared with other non-destructive metrology tools, such as the atomic force microscope (AFM) and CD-SEM, scatterometry offers the advantages of high throughput and superior repeatability. We have applied scatterometry to the monitoring of the depth of Shallow Trench Isolation (STI) for the analysis of complicated stack. We obtained sufficient measurement accuracy by optimizing a model. In addition, we propose the application of scatterometry to post-lithography monitoring for advanced process control (APC). A regression model was established to derive effective dose and focus from the change of photoresist profile monitored by means of scatterometry. In our experiment using an ArF scanner, we obtained sufficient measurement repeatability of dose and focus.

Paper Details

Date Published: 10 May 2005
PDF: 8 pages
Proc. SPIE 5752, Metrology, Inspection, and Process Control for Microlithography XIX, (10 May 2005); doi: 10.1117/12.600325
Show Author Affiliations
Toru Koike, Semiconductor Co., Toshiba Corp. (Japan)
Masafumi Asano, Semiconductor Co., Toshiba Corp. (Japan)
Toru Mikami, Semiconductor Co., Toshiba Corp. (Japan)
Yuichiro Yamazaki, Semiconductor Co., Toshiba Corp. (Japan)


Published in SPIE Proceedings Vol. 5752:
Metrology, Inspection, and Process Control for Microlithography XIX
Richard M. Silver, Editor(s)

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