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Proceedings Paper

Pattern fidelity in nanoimprinted films using CD-SAXS
Author(s): Ronald L. Jones; Christopher L. Soles; Eric K. Lin; Walter Hu; Ronald M. Reano; Stella W. Pang; Steven J. Weigand; Denis T. Keane; John P. Quintana
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Paper Abstract

The primary measure of process quality in nanoimprint lithography (NIL) is the fidelity of pattern transfer, comparing the dimensions of the imprinted pattern to those of the mold. As a potential next generation lithography, NIL is capable of true nanofabrication, producing patterns of sub-10 nm dimensions. Routine production of nanoscale patterns will require new metrologies capable of non-destructive dimensional measurements of both the mold and the pattern with sub-nm precision. In this article, a rapid, non-destructive technique termed Critical Dimension Small Angle X-ray Scattering (CD-SAXS) is used to measure the cross sectional shape of both a pattern master, or mold, and the resulting imprinted films. CD-SAXS data are used to extract periodicity as well as pattern height, width, and sidewall angles. Films of varying materials are molded by thermal embossed NIL at temperatures both near and far from the bulk glass transition (TG). The polymer systems include a photoresist, representing a mixture of a polymer and small molecular components, and two pure homopolymers. Molding at low temperatures (T-TG < 40°C) produces small aspect ratio patterns that maintain periodicity to within a single nanometer, but feature large sidewall angles. While the pattern height does not reach that of the mold until very large imprinting temperatures (T-TG ≈ 70°C), the pattern width of the mold is accurately transferred for T-TG > 30°C. In addition to obtaining basic dimensions, CD-SAXS data are used to assess the origin of loss in pattern fidelity.

Paper Details

Date Published: 6 May 2005
PDF: 8 pages
Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); doi: 10.1117/12.600267
Show Author Affiliations
Ronald L. Jones, National Institute of Standards and Technology (United States)
Christopher L. Soles, National Institute of Standards and Technology (United States)
Eric K. Lin, National Institute of Standards and Technology (United States)
Walter Hu, Univ. of Michigan (United States)
Ronald M. Reano, Univ. of Michigan (United States)
Stella W. Pang, Univ. of Michigan (United States)
Steven J. Weigand, Argonne National Lab. (United States)
Denis T. Keane, Argonne National Lab. (United States)
John P. Quintana, Argonne National Lab. (United States)

Published in SPIE Proceedings Vol. 5751:
Emerging Lithographic Technologies IX
R. Scott Mackay, Editor(s)

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