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Proceedings Paper

Mask fabrication towards sub-10 nm imprint lithography
Author(s): Jian Gu; Chun-Ping Jen; Qihuo Wei; Chiafu Chou; Frederic Zenhausern
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Paper Abstract

We report for the first time the use of orientation dependent etching (ODE) of (110) c-Si in sidewall thin film technology for imprint mask fabrication with low line edge roughness (LER) over a large area. Oxidation is used for sidewall thin film formation with a good critical dimension control. 2-dimensional oxidation effects are discussed. Features down to 12 nm have been fabricated successfully. Simulation shows that the fabricated oxide line is strong enough to imprint both thermoplastic and photo-curable imprint resists.

Paper Details

Date Published: 6 May 2005
PDF: 10 pages
Proc. SPIE 5751, Emerging Lithographic Technologies IX, (6 May 2005); doi: 10.1117/12.600207
Show Author Affiliations
Jian Gu, Arizona State Univ. (United States)
Chun-Ping Jen, Arizona State Univ. (United States)
Qihuo Wei, Arizona State Univ. (United States)
Chiafu Chou, Arizona State Univ. (United States)
Frederic Zenhausern, Arizona State Univ. (United States)


Published in SPIE Proceedings Vol. 5751:
Emerging Lithographic Technologies IX
R. Scott Mackay, Editor(s)

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